On the evolution of InAs thin films grown on the GaAs(001) surface, Fachbücher von Jan Grabowski
Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications.... Mehr erfahren
Finde die besten Angebote
Bester Preis34 Punkte
Galaxus
Versandkostenfrei
Lieferzeit: 2-4 Werktage
Versandkostenfrei | Lieferzeit: 2-4 Werktage
Ähnliche Produkte
Produktdetails
Semiconductor nanostructures are currently of high interest for a wide variety of electronic and optoelectronic applications. A large number of such devices is based on InAs/GaAs quantum dot structures. In the present work, the pathway of the InAs wetting layer evolution is studied in detail using scanning tunneling microscopy. Thin films varying between 0.09 ML and 1.65 ML of InAs material are grown on the GaAs(001) surface in both typical growth regimes, on the GaAs-c(4x4) and the GaAs-ß2(2x4) reconstructed surface. In principle, three growth stages are found. At low InAs coverages, the indium adsorbs in agglomerations of typically eight In atoms at energetically preferable surface sites. At an InAs coverage of about 0.67 ML the initial surface transforms into a (4x3) reconstructed InGaAs monolayer. Further deposited InAs forms a second layer on top of this InGaAs ML, characterized by.
Informationen
Lieferzeit:2-4 Werktage
Marke:Südwestdeutscher